All publications

  1. Y. Huang, G. Li, T. Bai, Y. Shin, X. Wang, A. I. More, P. Boucher, C. Chandrasekaran, J. Liu, and H. Fang, “Flexible electronic-photonic 3D integration from ultrathinpolymer chiplets,” npj Flexible Electronics, 8:61, 2024.
  2. J. Ryu, Y. Qiang, L. Chen, G. Li, X. Han, E. Woon, T. Bai, Y. Qi, S. Zhang, J. Liou, K. J. Seo, B. Feng, and H. Fang, “Multifunctional Nanomesh Enables Cellular-Resolution, Elastic Neuroelectronics,” Advanced Materials, 2403141, 2024.
  3. G. Li, D. Jang, Y. Shin, Y. Qiang, Y. Qi, S. Wang, and H. Fang, “Cracking modes and force dynamics in the insertion of neural probes into hydrogel brain phantom,” Journal of Neural Engineering, 21, 046009, 2024.
  4. Y. Shin, J. Ryu, T. Bai, Y. Qiang, Y. Qi, G. Li, Y. Huang, K. J. Seo, H. Fang, “Array-wide uniform PEDOT:PSS electroplating from potentiostatic deposition,” Biosensors and Bioelectronics, 261, 116418, 2024.
  5. K. J. Seo, M. Hill, J. Ryu, C.-H. Chiang, I. Rachinskiy, Y. Qiang, M. Trumpis, C. Wang, J. Viventi and H. Fang, “A soft, high-density neuroelectronic array,” npj Flexible Electronics, 7:40, 2023.
  6. Y. Qi, S.-K. Kang and H. Fang, “Advanced materials for implantable neuroelectronics,” MRS Bulletin, 48, 475–483, 2023. (cover article)
  7. J. Ryu, Y. Qiang, D. Jang, J. Suh and H. Fang, “Bilayer-Nanomesh Transparent Neuroelectrodes on 10μm-Thick PDMS,” IEEE IEDM, 2022.
  8. G. Shull, T. Jochum, K. J. Seo, Y. Shin, J. Morizio, H. Fang and J. Viventi, “Design and Simulation of a Low Power 384-channel Actively Multiplexed Neural Interface,” IEEE BioCAS, 477-481, 2022.
  9. N. Bhattacharjee, K. Mahalingam, A. Fedorko, A. Will-Cole, J. Ryu, M. Page, M. McConney, H. Fang, D. Heiman and N. Sun, “Effects of Crystalline Disorder on Interfacial and Magnetic Properties of Sputtered Topological Insulator/Ferromagnet Heterostructures,” ACS Applied Electronic Materials, 4, 9, 4288–4297, 2022.
  10. H. Fang and X. Yu, “Special Section Guest Editorial: Hybrid Photonic/X Neurointerfaces,” Neurophotonics, 9(3), 032201, 2022.
  11. Y. Qiang, W. Gu, Z. Liu, S. Liang, J. Ryu, K. J. Seo, W. Liu and H. Fang, “Crosstalk in Polymer Microelectrode Arrays,” Nano Research, 14, 3240–3247, 2021. (Nano Research Award Special Issue 2021)
  12. Z. Ramezani, K. J. Seo and H. Fang, “Hybrid Electrical and Optical Neural Interfaces,” Journal of Micromechanics and Microengineering, 31, 044002, 2021.
  13. S. Vinnikova, H. Fang and S. Wang, “Mechanics of Regular-Shape Nanomeshes for Transparent and Stretchable Devices,” Journal of Applied Mechanics, 87(10): 101010, 2020.
  14. C.-H. Chiang, S.M. Won, A.L. Orsborn, K. J. Yu, M. Trumpis, B. Bent, C. Wang, Y. Xue, S. Min, V. Woods, C. Yu, B.H. Kim, S.B. Kim, R. Huq, J. Li, K.J. Seo, F. Vitale, A. Richardson, H. Fang, Y. Huang, K. Shepard, B. Pesaran, J.A. Rogers and J. Viventi, “Development of a Neural Interface for High-Definition, Long-Term Recording in Rodents and Non-Human Primates,” Science Translational Medicine, 12 eaay4682, 2020.
  15. Y. Mei, W. Gao, H. Fang, Y. Lin and G. Shen, “Preface to the Special Issue on Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications,” Journal of Semiconductors, 41(4), 040101, 2020.
  16. P.-M. Wang, S. Culaclii, K. J. Seo, Y. Wang, H. Fang, Y.-K. Lo, and W. Liu, “Challenges in the Design of Large-Scale, High-Density, Wireless Stimulation and Recording Interface,” Interfacing Bioelectronics with Clinical Investigation, New York: Springer, Cham, pp 1-28, 2020.
  17. Y. Qiang, A. Ren, X. Zhang, P. Patel, X. Han, K. J. Seo, Z. Shi, Y. Wang, and H. Fang, “Design of Atomically-Thin-Body Field-Effect Sensors and Pattern Recognition Neural Networks for Ultra-Sensitive and Intelligent Trace Explosive Detection,” 2D Materials, 6, 044002, 2019.
  18. E. Song, C.-H. Chiang, R. Li, X. Jin, J. Zhao, M. Hill, Y. Xia , L. Li, Y. Huang, S. M. Won, K. J. Yu, X. Sheng, H. Fang, M. A. Alam, Y. Huang, J. Viventi, J.-K. Chang, and J. A. Rogers, “Flexible electronic/optoelectronic microsystems with scalable designs for chronic biointegration,” Proceedings of the National Academy of Sciences, 116, 15398-15406, 2019.
  19. X. Han†, K. J. Seo†, Y. Qiang, Z. Li, S. Vinnikova, Y. Zhong, X. Zhao, P. Hao, S. Wang, and H. Fang, “Nanomeshed Si Nanomembranes,” npj Flexible Electronics, 3:9, 2019.
  20. K. J. Seo†, P. Artoni†, Y. Qiang, Y. Zhong, X. Han, Z. Shi, W. Yao, M. Fagiolini, and H. Fang, “Transparent, Flexible, Penetrating Microelectrode Arrays with Capabilities of Single Unit Electrophysiology,” Advanced Biosystems, 1800276, 2019. (cover article)
  21. G. Rong, E. Kim, Y. Qiang, W. Di, Y. Zhong, X. Zhao, H. Fang, and H. Clark, “Imaging sodium flux during action potentials in neurons with fluorescent nanosensors and transparent microelectrodes,” ACS Sensors, 3, 2499–2505, 2018. (cover article)
  22. E. Song, R. Li, X. Jin, H. Du, Y. Huang, J. Zhang, Y. Xia, H. Fang, Y. K. Lee, K. J. Yu, Y. Mei, M. A. Alam, Y. Huang, and J. A. Rogers. “Ultra-thin Trilayer Assemblies as Long-Lived Barriers Against Water and Ion Penetration in Flexible Bioelectronic Implants,” ACS Nano,12, 10317–10326, 2018.
  23. Y. Qiang†, P. Artoni†, K. J. Seo†, S. Culaclii, V. Hogan, X. Zhao, Y. Zhong, X. Han, P.-M. Wang, Y.-K. Lo, Y. Li, H. A. Patel, Y. Huang, A. Sambangi, J. S. V. Chu, W. Liu, M. Fagiolini, and H. Fang, “Transparent Arrays of Bilayer-Nanomesh Microelectrodes for Simultaneous Electrophysiology and 2-Photon Imaging in the Brain,” Science Advances, 4, eaat0626, 2018.
  24. K. J. Seo†, X. Han†, Y. Qiang, X. Zhao, Y. Zhong, Z. Shi, and H. Fang, “Wafer-scale, Stretchable Nanomeshes from an Ultrathin-Support-Layer Assisted Transfer,” Applied Physics Letters, 112, 263101, 2018.
  25. G. Conti, S. Nemšák, C.-T. Kuo, M. Gehlmann, C. Conlon, A. Keqi, A. Rattanachata, O. Karslıoğlu, J. Mueller, J. Sethian, H. Bluhm, J. E. Rault, J. P. Rueff, H. Fang, A. Javey, and C. S. Fadley, “Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy,” APL Materials, 6, 058101, 2018.
  26. Y. Qiang†, K. J. Seo†, X. Zhao, P. Artoni, N. Golshan, S. Culaclii, P.-M. Wang, W. Liu, K. S. Ziemer, M. Fagiolini, and H. Fang, “Bilayer Nanomesh Structures for Transparent Recording and Stimulating Microelectrodes,” Advanced Functional Materials, 1704117, 2017.
  27. K.J. Seo†, Y. Qiang†, I. Bilgin, S. Kar, C. Vinegoni, R. Weissleder, and H. Fang, “Transparent Electrophysiology Microelectrodes and Interconnects from Metal Nanomesh,” ACS Nano, 11, 4365–4372, 2017.
  28. H. Fang, K.J. Yu, C. Gloschat, Z. Yang, E. Song, C.-H. Chiang, J. Zhao, S.M. Won, S. Xu, M. Trumpis, Y. Zhong, S.W. Han, Y. Xue, D. Xu, S.W. Choi, G. Cauwenberghs, M. Kay, Y. Huang, J. Viventi, I.R. Efimov, and J.A. Rogers, “Capacitively Coupled Arrays of Multiplexed Flexible Silicon Transistors for Long-Term Cardiac Electrophysiology,” Nature Biomedical Engineering, 1, 0038, 2017. (highlighted article)
  29. J-K Chang†, H. Fang†, C.A. Bower, E. Song, X. Yu, and J.A. Rogers, “Materials and processing approaches for foundry-compatible transient electronics,” Proceedings of the National Academy of Sciences, 114(28), E5522-E5529, 2017.
  30. E. Song, Y.K. Lee, R. Li, J. Li, X. Jin, K. J. Yu, Z. Xie, H. Fang, Y. Zhong, H. Du, J. Zhang, G. Fang, Y. Kim, Y. Yoon, M.A. Alam, Y. Mei, Y. Huang, and J.A. Rogers, “Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants,” Advanced Functional Materials,  1702284, 2017.
  31. X. Jin, C. Jiang, E. Song, H. Fang, J. A. Rogers, and M. A. Alam, “Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems,” IEEE Transactions on Electron Devices, 64, 3443-3451, 2017.
  32. E. Song†, H. Fang†, X. Jin, J. Zhao, C. Jiang, K. J. Yu, Y. Zhong, D. Xu, J. Li, G. Fang, H. Du, J. Zhang, J. M. Park, Y. Huang, M. A. Alam, Y. Mei, and J. A. Rogers, “Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems,” Advanced Electronic Materials, 1700077, 2017.
  33. X. Li, L. Tao, Z. Chen, H. Fang, X. Li, X. Wang, J.-B. Xu, and H. Zhu, “Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics,” Applied Physics Reviews, 4, 021306 2017.
  34. H. Fang, J. Zhao, K. Yu, E. Song, A.B. Farimani, C.H. Chiang, X. Jin, Y. Xue, D. Xu, W. Du, K.J. Seo, Y. Zhong, Z. Yang, S. Won, G. Fang, S.W. Choi, S. Chaudhuri, Y. Huang, M. Ashraful Alam, J. Viventi, N.R. Aluru, and J.A. Rogers, “Ultra-thin, Transferred Layers of Thermally Grown Silicon Dioxide as Biofluid Barriers for Bio-Integrated Flexible Electronic Systems,” Proceedings of the National Academy of Sciences, 113, 11682-11687, 2016.
  35. K.J. Yu, D. Kuzum, S.-W. Hwang, B.H. Kim, H. Juul, N.H. Kim, S.M. Won, K. Chiang, M. Trumpis, A.G. Richardson, H. Cheng, H. Fang, M. Thompson, H. Bink, D. Talos, K.J. Seo, H.N. Lee, S.-K. Kang, J.-H. Kim, J.Y. Lee, Y. Huang, F.E. Jensen, M.A. Dichter, T.H. Lucas, J. Viventi, B. Litt, and J.A. Rogers, “Bioresorbable Silicon Electronics for Transient Spatiotemporal Mapping of Electrical Activity from the Cerebral Cortex,” Nature Materials, 15, 782-791, 2016.
  36. L. Gao, Y. Zhang, H. Zhang, S. Doshay, X. Xie, H. Luo, D. Shah, Y. Shi, S. Xu, H. Fang, J.A. Fan, P. Nordlander, Y. Huang, and J.A. Rogers, “Optics and Nonlinear Buckling Mechanics in Large-Area, Highly Stretchable Arrays of Plasmonic Nanostructures,” ACS Nano, 9(6), 5968-5975, 2015.
  37. T. Roy, M. Tosun, X. Cao, H. Fang, D.-H. Lien, P. Zhao, Y.-Z. Chen, Y.-L. Chueh, J. Guo, and A. Javey, “Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors,” ACS Nano, 9(2), 2071–2079, 2015.
  38. P. Zhao, S. Desai, M. Tosun, T. Roy, H. Fang, A. Sachid, M. Amani, C. Hu, and A. Javey, “2D Layered Materials: From Materials Properties to Device Applications,” IEEE IEDM, 27.3.1 – 27.3.4, 2015.
  39. H. Fang, C. Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J.S. Kang, H.A. Bechtel, S.B. Desai, F. Kronast, A.A. Unal, G. Conti, C. Conlon, G.K. Palsson, M.C. Martin, A.M. Minor, C.S. Fadley, E. Yablonovitch, R. Maboudian, and A. Javey, “Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides,” Proceedings of the National Academy of Sciences, 111 (17), 6198-6202, 2014.
  40. S.B. Desai, G. Seol, J.S. Kang, H. Fang, C. Battaglia, R. Kapadia, J.W. Ager, J. Guo, and A. Javey, “Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2 ,” Nano Letters, 14 (8), 4592–4597, 2014.
  41. M. Tosun, S. Chuang, H. Fang, A.B. Sachid, M. Hettick, Y. Lin, Y. Zeng, and A. Javey, “High Gain Inverters Based on WSe2Complementary Field-Effect Transistors,” ACS Nano, 8(5), 4948–4953, 2014.
  42. S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J.S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R.M. Wallace, and A. Javey, “MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts,” Nano Letters, 14 (3), 1337–1342, 2014.
  43. H. Fang, H.A. Bechtel, E. Plis, M.C. Martin, S. Krishna, E. Yablonovitch, and A. Javey, “Quantum of Optical Absorption in Two-Dimensional Semiconductors,” Proceedings of the National Academy of Sciences, 110, 11688-11691, 2013.
  44. H. Fang, M. Tosun, G. Seol, T-C. Chang, K. Takei, J. Guo, and A. Javey, “Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium,” Nano Letters, 13, 1991-1995, 2013.
  45. S. Chuang, R. Kapadia, H. Fang, T.C. Chang, W.-C. Yen, Y.-L. Chueh, and A. Javey, “Near-ideal electrical properties of InAs/WSe2van der Waals heterojunction diodes,” Applied Physics Letters, 102, 242101, 2013. (cover article)
  46. K. Takei, R. Kapadia, H. Fang, E. Plis, S. Krishna, and A. Javey, “High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics,” Applied Physics Letters, 102, 153513, 2013.
  47. H. Fang, S. Chuang, T.C. Chang, K. Takei, T. Takahashi, and A. Javey, “High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts,” Nano Letters, 12, 3788-3792, 2012.
  48. J. Nah†, H. Fang†, C. Wang, K. Takei, M.H. Lee, E. Plis, S. Krishna, and A. Javey, “III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates,” Nano Letters, 12, 3592-3595, 2012.
  49. H.Fang, S.Chuang, K.Takei, H.S.Kim, E.Plis, C.-H.Liu, S.Krishna, Y.-L.Chueh, and A. Javey, “Ultrathin-Body, High-Mobility InAsSb-on-Insulator Field-Effect Transistors,” IEEE EDL, 33(4), 504-506, 2012.
  50. C. Wang, J.-C. Chien, H. Fang, K. Takei, J. Nah, E. Plis, S. Krishna, A.M. Niknejad, and A. Javey. “Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates,” Nano Letters, 12, 4140-4145, 2012.
  51. J. Nah, S.B. Kumar, H. Fang, Y.-Z. Chen, E. Plis, Y.-L. Chueh, S. Krishna, J. Guo, and A. Javey, “Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors,” Journal of Physical Chemistry C, 116, 9750–9754, 2012.
  52. K. Takei, M. Madsen, H. Fang, R. Kapadia, S. Chuang, H.S. Kim, C.-H. Liu, E. Plis, J. Nah, S. Krishna, Y.-L. Chueh, J. Guo, and A. Javey, “Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors,” Nano Letters, 12, 2060-2066, 2012.
  53. K. Takei†, H. Fang†, S.B. Kumar†, R. Kapadia, Q. Gao, M. Madsen, H.S. Kim, C.-H. Liu, Y.-L. Chueh, E. Plis, S. Krishna, H.A. Bechtel, J. Guo, and A. Javey.”Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes,” Nano Letters, 11, 5008–5012, 2011.
  54. H. Fang, M. Madsen, C. Carraro, K. Takei, H.S. Kim, E. Plis, S.-Y. Chen, S. Krishna, Y.-L. Chueh, R. Maboudian, and A. Javey, “Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator,” Applied Physics Letters, 98, 012111, 2011.
  55. M. Madsen, K. Takei, R. Kapadia, H. Fang, H. Ko, T. Takahashi, A.C. Ford, M.H. Lee, and A. Javey, “Nanoscale Semiconductor “X” on Substrate “Y” – Processes, Devices and Applications,” Advanced Materials, 23, 3115–3127, 2011.
  56. K. Takei, S. Chuang, H. Fang, R. Kapadia, C.-H. Liu, J. Nah, H.S. Kim, E. Plis, S. Krishna, Y.-L. Chueh, and A. Javey, “Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness,” Applied Physics Letters, 99, 103507, 2011.
  57. B. Cheng, H. Fang, J. Lan, Y. Liu, Y.-H. Lin, and C.-W. Nan, “Thermoelectric Performance of Zn and Ge Co-Doped In2O3 Fine-Grained Ceramics by the Spark Plasma Sintering,” Journal of the American Ceramic Society, 94 (8), 2279–2281, 2011.
  58. H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P.W. Leu, K. Ganapathi, E. Plis, H.S. Kim, S.-Y. Chen, M. Madsen, A.C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, and A. Javey, “Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors,” Nature, 468, 286–289, 2010.
  59. O. Ergen, D.J. Ruebusch, H. Fang, A.A. Rathore, R. Kapadia, Z. Fan, K. Takei, A. Jamshidi, M. Wu, and A. Javey, “Shape-Controlled Synthesis of Single-Crystalline Nanopillar Arrays by Template-Assisted Vapor-Liquid-Solid Process,” Journal of the American Chemical Society, 132 (40), 13972–13974, 2010.
  60. M. Zheng, K. Takei, B. Hsia, H. Fang, X. Zhang, N. Ferralis, H. Ko, Y.-L. Chueh, Y. Zhang, R. Maboudian, and A. Javey, “Metal-Catalyzed Crystallization of Amorphous Carbon to Graphene,” Applied Physics Letters, 96, 063110, 2010.
  61. J. Lan, Y.H. Lin, H. Fang, A. Mei, C.W. Nan, Y. Liu, S. Xu, and M. Peters, “High‐Temperature Thermoelectric Behaviors of Fine‐Grained Gd‐Doped CaMnO3 Ceramics,” Journal of the American Ceramic Society, 93(8), 2121-2124, 2010.

† denotes equal contributions.
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