Publications

——–2023——–

  • Kassa, G., Liu, J., Hartman, T.W., Dhiman, S., Gadhamshetty, V. and Gnimpieba, E., 2023. Artificial Intelligence Based Organic Synthesis Planning for Material and Bio-Interface Discovery. In Microbial Stress Response: Mechanisms and Data Science (pp. 93-111). American Chemical Society. [pdf]

——–2022——–

  • Cline, C., Wang, H., Kong, J., Li, T., Liu, J. and Wegst, U.G., 2022. Heterogeneous Ice Nucleation Studied with Single-Layer Graphene. Langmuir, 38(49), pp.15121-15131. [pdf]
  • Zhiyuan, W.A.N.G., Ma, J., Liu, J., Fossum, E.R. and Wang, X., Dartmouth College, 2022. UV/VIS/IR backside-illuminated photon-counting sensor. U.S. Patent 11,522,098. [pdf]
  • Zhiyuan, W.A.N.G., Wang, X. and Liu, J., Dartmouth College, 2022. Nanophotonic hot-electron devices for infrared light detection. U.S. Patent 11,462,656. [pdf]
  • Hu, J., Michon, J., Shalaginov, M., Micale, G., Cardenas, J., Notaros, J., Notaros, M., Liu, J., Serna, S., Nagarkar, P. and Kimerling, L.C., 2022, October. Online collaborative approach to teaching hands-on photonic integrated circuit (PIC) device testing. In Optics Education and Outreach VII (p. PC1221301). SPIE. [pdf]
  • Xu, C., Wang, X. and Liu, J., 2022. Spinel Cu–Mn–Cr Oxide Nanoparticle-Pigmented Solar Selective Coatings Maintaining> 94% Efficiency at 750° C. ACS Applied Materials & Interfaces. [pdf]
  • Liu, S., Covian, A.C., Wang, X., Cline, C.T., Akey, A., Dong, W., Yu, S.Q. and Liu, J., 2022. 3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys. Small Methods, 6(5), p.2200029. [pdf]
  • Liu, S., Covian, A.C., Gardener, J.A., Akey, A., Levin, B.D., Wang, X. and Liu, J., 2022. Growth of α-Sn on silicon by a reversed β-Sn to α-Sn phase transformation for quantum material integration. Communications Materials, 3(1), pp.1-11. [pdf]

——–2021——–

  • Wang, X., Lee, E., Xu, C., & Liu, J. (2021). High-efficiency, air-stable manganese–iron oxide nanoparticle-pigmented solar selective absorber coatings toward concentrating solar power systems operating at 750° C. Materials Today Energy, 19, 100609. [pdf]
  • Fang, T., Gao, X., Wang, X., & Liu, J. (2021). Design of Gate-Tunable Graphene Electro-Optical Reflectors Based on Optical Slot-Antenna Coupled Cavity. Journal of Physics: Photonics. [pdf]
  • Lee, E., Anagnost, K. M., Wang, Z., James, M. R., Fossum, E. R., & Liu, J. (2021). Monte Carlo Modeling and Design of Photon Energy Attenuation Layers for> 10× Quantum Yield Enhancement in Si-Based Hard X-ray Detectors. Instruments, 5(2), 17. [pdf]
  • Wang, Z. H.; Anagnost, K.; Barnes, C. W.; Dattelbaum, D. M.; Fossum, E. R.; Lee, E.; Liu, J. F.; Ma, J. J.; Meijer, W. Z.; Nie, W. Y.; Sweeney, C. M.; Therrien, A. C.; Tsai, H. H.; Yue, X., Billion-pixel x-ray camera (BiPC-X). Rev. Sci. Instrum. 2021, 92 (4), 5. [pdf]
  • Wang, X. X.; Yu, S. L.; Zuo, H. J.; Sun, X. C.; Hu, J. J.; Gu, T.; Liu, J. F., Design of Hybrid Plasmonic Multi-Quantum-Well Electro-Reflective Modulators Towards < 100 fJ/bit Photonic Links. IEEE J. Sel. Top. Quantum Electron. 2021, 27 (3), 8. [pdf]
  • Fu, S. D.; Wang, X. X.; Wang, H. Z.; Gao, X. X.; Broderick, K.; Kong, J.; Liu, J. F., An optical slot-antenna-coupled cavity (SAC) framework towards tunable free-space graphene photonic surfaces. Nano Research 2021, 14 (5), 1364-1373. [pdf]
  • Buckley, D. A. H.; McBride, V. A.; De Almeida, U. B.; Shustov, B.; Pozanenko, A.; Lutovinov, A.; Omar, A.; Murthy, J.; Safonova, M.; Liu, J. F.; Soria, R., Towards a BRICS Optical Transient Network (BRICS-OTN). An. Acad. Bras. Cienc. 2021, 93, 26. [pdf]

——–2020——–

  • Zhou, Y. Y.; Tran, H.; Du, W.; Liu, J. F.; Sun, G.; Soref, R.; Margetis, J.; Tolle, J.; Zhang, Y. H.; Li, B. H.; Mortazavi, M.; Yu, S. Q.; Ieee, Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon. In 2020 Conference on Lasers and Electro-Optics, Ieee: New York, 2020. [pdf]
  • Zhou, Y. Y.; Miao, Y. H.; Ojo, S.; Tran, H.; Abernathy, G.; Grant, J. M.; Amoah, S.; Salamo, G.; Du, W.; Liu, J. F.; Margetis, J.; Tolle, J.; Zhang, Y. H.; Sun, G.; Soref, R. A.; Li, B. H.; Yu, S. Q., Electrically injected GeSn lasers on Si operating up to 100 K. Optica 2020, 7 (8), 924-928. [pdf]
  • Zhou, Y. Y.; Miao, Y. H.; Ojo, S.; Abernathy, G.; Du, W.; Sun, G.; Soref, R.; Liu, J. F.; Zhang, Y. H.; Mortazavi, M.; Li, B. H.; Yu, S. Q.; Ieee, Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si. In 2020 Conference on Lasers and Electro-Optics, Ieee: New York, 2020. [pdf]
  • Zhou, G. N.; Covian, A. V. C.; Lee, K. H.; Tan, C. S.; Liu, J. F.; Xia, G. R., Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD. Opt. Mater. Express 2020, 10 (1), 1-13. [pdf]
  • Yu, X. B.; Fu, S. D.; Song, Y.; Wang, H. Z.; Wang, X. X.; Kong, J.; Liu, J. F., Color Contrast of Single-Layer Graphene under White Light Illumination Induced by Broadband Photon Management. Acs Applied Materials & Interfaces 2020, 12 (3), 3827-3835. [pdf]
  • Yu, S. L.; Zuo, H. J.; Sun, X. C.; Liu, J. F.; Gu, T.; Hu, J. J., Optical Free-Form Couplers for High-density Integrated Photonics (OFFCHIP): A Universal Optical Interface. J. Lightwave Technol. 2020, 38 (13), 3358-3365. [pdf]
  • Yu, S. L.; Qiu, X. M.; Zuo, H. J.; Wang, X. X.; Sun, X. C.; Liu, J. F.; Gu, T.; Hu, J. J.; Ieee, Integrated Quadratic Reflectors for High-Performance Optical Interconnects. In 2020 Ieee Photonics Conference, Ieee: New York, 2020. [pdf]
  • Wang, X. X.; Yu, S. L.; Qin, J.; Cuervo-Covian, A.; Zuo, H. J.; Sun, X. C.; Hu, J. J.; Gu, T.; Liu, J. F., Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators Towards Ultralow Power Inter-Chip Optical Interconnects. J. Lightwave Technol. 2020, 38 (13), 3414-3421. [pdf]
  • Cao, B. X.; Chen, S. D.; Jin, X. C.; Liu, J. F.; Li, T. S., Short-Range Order in GeSn Alloy. Acs Applied Materials & Interfaces 2020, 12 (51), 57245-57253. [pdf]
  • Abernathy, G.; Zhou, Y. Y.; Ojo, S.; Miao, Y. H.; Du, W.; Sun, G.; Soref, R.; Liu, J. F.; Zhang, Y. H.; Mortazavi, M.; Li, B. H.; Yu, S. Q.; Ieee, Study of gain for SiGeSn/GeSn/SiGeSn multiple quantum well lasers. In 2020 Conference on Lasers and Electro-Optics, Ieee: New York, 2020. [pdf]

——–2019——–

  • Zuo, H. J.; Yu, S. L.; Wang, X. X.; Liu, J. F.; Sun, X. C.; Gu, T.; Hu, J. J.; Ieee, High-performance Single-mode Polymer Waveguide Devices for Chip-scale Optical Interconnects. In 2019 8th Annual Ieee Photonics Society Optical Interconnects Conference, Ieee: New York, 2019. [pdf]
  • Zhou, Y. Y.; Margetis, J.; Abernathy, G.; Dou, W.; Grant, P. C.; Alharthi, B.; Du, W.; Wadsworth, A.; Guo, Q. Y.; Tran, H.; Ojo, S.; Mosleh, A.; Ghetmiri, S. A.; Thompson, G. B.; Liu, J. F.; Sun, G.; Soref, R.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q.; Ieee, Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si. In 2019 Conference on Lasers and Electro-Optics, Ieee: New York, 2019. [pdf]
  • Zhou, Y. Y.; Dou, W.; Du, W.; Ojo, S.; Tran, H.; Ghetmiri, S. A.; Liu, J. F.; Sun, G.; Soref, R.; Margetis, J.; Tolle, J.; Li, B. H.; Chen, Z.; Mortazavi, M.; Yu, S. Q., Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si. Acs Photonics 2019, 6 (6), 1434-1441. [pdf]
  • Zhou, Y. Y.; Dou, W.; Du, W.; Ojo, S.; Tran, H.; Ghetmiri, S.; Liu, J. F.; Sun, G.; Soref, R.; Margetis, J.; Tolle, J.; Li, B. H.; Chen, Z.; Mortazavi, M.; Yu, S. Q.; Ieee, Si-based Mid-Infrared GeSn-Edge-Emitting Laser with Operating Temperature up to 260 K. In 2019 Conference on Lasers and Electro-Optics, Ieee: New York, 2019. [pdf]
  • Yu, S. L.; Zuo, H. J.; Wang, X. X.; Sun, X. C.; Liu, J. F.; Hu, J. J.; Gu, T.; Ieee, Seamless Hybrid-integrated Interconnect NEtwork (SHINE). Ieee: New York, 2019. [pdf]
  • Wang, X. X.; Covian, A. C.; Je, L. S.; Fu, S. D.; Li, H. F.; Piao, J.; Liu, J. F., GeSn on Insulators (GeSnOI) Toward Mid-infrared Integrated Photonics. Front. Physics 2019, 7, 15. [pdf]
  • Fu, S. D.; Wang, H. Z.; Wang, X. X.; Song, Y.; Kong, J.; Liu, J. F., Self-Assembled, Ultrahigh Refractive Index Pseudo-Periodic Sn Nanostructures for Broad-Band Infrared Photon Management in Single Layer Graphene. Acs Photonics 2019, 6 (1), 50-58. [pdf]
  • Castley, D.; Goodwin, C.; Liu, J. F., Computational and experimental comparison of boron carbide, gadolinium oxide, samarium oxide, and graphene platelets as additives for a neutron shield. Radiat. Phys. Chem. 2019, 165, 9. [pdf]

——–2018——–

  • Zhang, Y.; Wu, Y.; Wang, X. X.; Ying, L.; Kumar, R.; Yu, Z. F.; Fossum, E. R.; Liu, J. F.; Salamo, G.; Yu, S. Q., Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots. Acs Photonics 2018, 5 (5), 2008-2021. [pdf]
  • Zhang, Y.; Wu, Y.; Wang, X. X.; Fossum, E. R.; Kumar, R.; Liu, J. F.; Salamo, G.; Yu, S. Q.; Ieee, Harnessing Quantum Wave Nature of Individual Electrons for Single Photon Detection. In 2018 Conference on Lasers and Electro-Optics, Ieee: New York, 2018. [pdf]
  • Xu, Z.; Liu, Y.; Dong, L.; Closson, A. B.; Hao, N.; Oglesby, M.; Escobar, G. P.; Fu, S. D.; Han, X. M.; Wen, C. S.; Liu, J. F.; Feldman, M. D.; Chen, Z.; Zhang, J. X. J., Tunable Buckled Beams with Mesoporous PVDF-TrFE/SWCNT Composite Film for Energy Harvesting. Acs Applied Materials & Interfaces 2018, 10 (39), 33516-33522. [pdf]
  • Wang, Z. Y.; Wang, X. X.; Liu, J. F., An Efficient Nanophotonic Hot Electron Solar-Blind UV Detector. Acs Photonics 2018, 5 (10), 3989-3995. [pdf]
  • Wang, X. X.; Yu, X. B.; Fu, S. D.; Lee, E.; Kekalo, K.; Liu, J. F., Design and optimization of nanoparticle-pigmented solar selective absorber coatings for high-temperature concentrating solar thermal systems. J. Appl. Phys. 2018, 123 (3), 11. [pdf]
  • Wang, X. X.; Liu, J. F., Emerging technologies in Si active photonics. J. Semicond. 2018, 39 (6), 29. [pdf]
  • Song, S.; Healy, N.; Svendsen, S. K.; Osterberg, U. L.; Covian, A. V. C.; Liu, J.; Peacock, A. C.; Ballato, J.; Laurell, F.; Fokine, M.; Gibson, U. J., Crystalline GaSb-core optical fibers with room-temperature photoluminescence. Opt. Mater. Express 2018, 8 (6), 1435-1440. [pdf]
  • Margetis, J.; Zhou, Y. Y.; Dou, W.; Grant, P. C.; Alharthi, B.; Du, W.; Wadsworth, A.; Guo, Q. Y.; Tran, H.; Ojo, S.; Abernathy, G.; Mosleh, A.; Ghetmiri, S. A.; Thompson, G. B.; Liu, J. F.; Sun, G.; Soref, R.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q., All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90K. Appl. Phys. Lett. 2018, 113 (22), 5. [pdf]
  • Margetis, J.; Al-Kabi, S.; Du, W.; Dou, W.; Zhou, Y. Y.; Pham, T.; Grant, P.; Ghetmiri, S.; Mosleh, A.; Li, B. H.; Liu, J. F.; Sun, G.; Soref, R.; Tolle, J.; Mortazavi, M.; Yu, S. Q., Si-Based GeSn Lasers with Wavelength Coverage of 2-3 mu m and Operating Temperatures up to 180 K. Acs Photonics 2018, 5 (3), 827-833. [pdf]
  • Liu, J. F.; Wang, X. X.; Ieee, Epitaxy-Free Direct Bandgap GeSn Materials and Devices for Facile 3D Photonic Integration. In 2018 Conference on Lasers and Electro-Optics, Ieee: New York, 2018. [pdf]
  • Lee, E.; Kekalo, K.; Xu, C.; Wang, X. X.; Liu, J. F., MnFe2O4 and MnO2 nanoparticle-based high-temperature, air-stable, long-term antioxidation cermet solar selective absorbers. In Nanoengineering: Fabrication, Properties, Optics, and Devices Xv, Panchapakesan, B.; Sakdinawat, A. E.; Attias, A. J.; Dobisz, E. A., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2018; Vol. 10730. [pdf]
  • Grant, P. C.; Margetis, J.; Zhou, Y. Y.; Dou, W.; Abernathy, G.; Kuchuk, A.; Du, W.; Li, B. H.; Tolle, J.; Liu, J. F.; Sun, G.; Soref, R. A.; Mortazavi, M.; Yu, S. Q., Direct bandgap type-I GeSn/GeSn quantum well on a GeSn- and Ge-buffered Si substrate. AIP Adv. 2018, 8 (2), 7. [pdf]
  • Grant, P. C.; Margetis, J.; Zhou, Y. Y.; Dou, W.; Abernathy, G.; Kuchuk, A.; Du, W.; Ghetmiri, S. A.; Li, B. H.; Tolle, J.; Liu, J. F.; Sun, G.; Soref, R. A.; Mortazavi, M.; Yu, S. Q.; Ieee, Direct Bandgap Type-I GeSn Quantum Well toward Si-based Optoelectronics. In 2018 Conference on Lasers and Electro-Optics, Ieee: New York, 2018. [pdf]
  • Grant, P. C.; Margetis, J.; Du, W.; Zhou, Y. Y.; Dou, W.; Abernathy, G.; Kuchuk, A.; Li, B.; Tolle, J.; Liu, J. F.; Sun, G.; Soref, R. A.; Mortazavi, M.; Yu, S. Q., Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement. Nanotechnology 2018, 29 (46), 9. [pdf]
  • Dou, W.; Zhou, Y. Y.; Margetis, J.; Ghetmiri, S. A.; Du, W.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q.; Ieee, Optically Pumped GeSn-edge-emitting Laser with Emission at 3 mu m for Si Photonics. In 2018 Conference on Lasers and Electro-Optics, Ieee: New York, 2018. [pdf]
  • Dou, W.; Zhou, Y. Y.; Margetis, J.; Ghetmiri, S. A.; Al-Kabi, S.; Du, W.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q., Optically pumped lasing at 3 mu m from compositionally graded GeSn with tin up to 22.3%. Opt. Lett. 2018, 43 (19), 4558-4561. [pdf]

——–2017——–

  • Zhang, Y.; Wu, Y.; Wang, X. X.; Fossum, E. R.; Kumar, R.; Liu, J. F.; Salamo, G.; Yu, S. Q., Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling. Opt. Express 2017, 25 (22), 26508-26518. [pdf]
  • Ma, J. J.; Zhang, Y.; Wang, X. X.; Ying, L.; Masoodian, S.; Wang, Z. Y.; Starkey, D. A.; Deng, W.; Kumar, R.; Wu, Y.; Ghetmiri, S. A.; Yu, Z. F.; Yu, S. Q.; Salamo, G. J.; Fossum, E. R.; Liu, J. F., Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors. In Advanced Photon Counting Techniques Xi, Itzler, M. A.; Campbell, J. C., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2017; Vol. 10212. [pdf]
  • Ghetmiri, S. A.; Zhou, Y. Y.; Margetis, J.; Al-Kabi, S.; Dou, W.; Mosleh, A.; Du, W.; Kuchuk, A.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Naseem, H. A.; Li, B. H.; Mortazavi, M.; Yu, S. Q., Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics. Opt. Lett. 2017, 42 (3), 387-390. [pdf]
  • Du, W.; Ghetmiri, S. A.; Margetis, J.; Al-Kabi, S.; Zhou, Y. Y.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q., Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure. J. Appl. Phys. 2017, 122 (12), 7. [pdf]
  • Du, W.; Ghetmiri, S.; Al-Kabi, S.; Margetis, J.; Zhou, Y. Y.; Dou, W.; Mosleh, A.; Liu, J. F.; Sun, G.; Soref, R.; Tolle, J.; Li, B. H.; Mortazavi, M.; Yu, S. Q.; Ieee, Study of SiGeSn/GeSn/SiGeSn Quantum Well towards All Group-IV-Optoelectronics. In 2017 Conference on Lasers and Electro-Optics, Ieee: New York, 2017. [pdf]
  • Al-Kabi, S.; Ghetmiri, S. A.; Margetis, J.; Pham, T.; Zhou, Y. Y.; Dou, W.; Du, W.; Mosleh, A.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B. H.; Mortazavi, M.; Naseem, H. A.; Yu, S. Q.; Ieee, Optically pumped Si-based edge-emitting GeSn laser. In 2017 Conference on Lasers and Electro-Optics, Ieee: New York, 2017. [pdf]

——–2016——–

  • Yu, X. B.; Wang, X. X.; Zhang, Q. L.; Liu, J. F., Interfacial engineering of solution-processed Ni nanochain-SiOx (x < 2) cermets towards thermodynamically stable, anti-oxidation solar selective absorbers. J. Appl. Phys. 2016, 119 (13), 8. [pdf]
  • Wang, X. X.; Wang, Z. Y.; Liu, J. F.; Ieee, Nanophotonic Hot Electron Devices for UV Si-Photonics. Ieee: New York, 2016; p 207-208. [pdf]
  • Wang, X. X.; Li, H.; Liu, J. F., Power-dependent Transient Gain Study on Direct Gap GeSn Crystallized on Amorphous Layers. In Sige, Ge, and Related Materials: Materials, Processing, and Devices 7, Harame, D.; Murota, J.; Caymax, M.; Tillack, B.; Masini, G.; Miyazaki, S., Eds. Electrochemical Soc Inc: Pennington, 2016; Vol. 75, pp 223-228. [pdf]
  • Li, H. F.; Wang, X. X.; Liu, J. F., Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO2 layers. Appl. Phys. Lett. 2016, 108 (10), 5. [pdf]
  • Li, H. F.; Covian, A. V. C.; Wang, X. X.; Liu, J. F., High Thermal Stability of Tensile Strained Direct Gap GeSn Crystallized on Amorphous Layers. In Sige, Ge, and Related Materials: Materials, Processing, and Devices 7, Harame, D.; Murota, J.; Caymax, M.; Tillack, B.; Masini, G.; Miyazaki, S., Eds. Electrochemical Soc Inc: Pennington, 2016; Vol. 75, pp 623-632. [pdf]
  • Al-Kabi, S.; Ghetmiri, S. A.; Margetis, J.; Pham, T.; Zhou, Y. Y.; Dou, W.; Collier, B.; Quinde, R.; Du, W.; Mosleh, A.; Liu, J. F.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B. H.; Mortazavi, M.; Naseem, H. A.; Yu, S. Q., An optically pumped 2.5 mu m GeSn laser on Si operating at 110 K. Appl. Phys. Lett. 2016, 109 (17), 4. [pdf]

——–2015——–

  • Xu, X. J.; Wang, X. X.; Nishida, K.; Takabayashi, K.; Sawano, K.; Shiraki, Y.; Li, H. F.; Liu, J. F.; Maruizumi, T., Ultralarge transient optical gain from tensile-strained, n-doped germanium on silicon by spin-on dopant diffusion. Applied Physics Express 2015, 8 (9), 4. [pdf]
  • Wong, A.; Wang, X. X.; Liu, J. F., Nano-needle structured, ambipolar high electrical conductivity SnOx (x <= 1) thin films for infrared optoelectronics. J. Appl. Phys. 2015, 117 (10), 7. [pdf]
  • Wang, X. X.; Wong, A.; Malek, S.; Cai, Y.; Liu, J. F., High-performance infrared light trapping in nano-needle structured p(+) SnOx ( x <= 1)/thin film n-Ge photodiodes on Si. Opt. Lett. 2015, 40 (11), 2603-2606. [pdf]
  • Lin, H. T.; Sun, X. C.; Liu, J. F.; Hu, J. J., Diffractive broadband coupling into high-Q resonant cavities. Opt. Lett. 2015, 40 (10), 2377-2380. [pdf]

——–2014——–

  • Yu, X. B.; Wang, X. X.; Zhang, Q. L.; Liu, J. F., Anti-oxidation, high-performance solution-processed Ni plasmonic nanochain-SiOx selective solar thermal absorbers. In High and Low Concentrator Systems for Solar Energy Applications Ix, Plesniak, A. P.; Pfefferkorn, C., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2014; Vol. 9175. [pdf]
  • Yu, X. B.; Wang, X. X.; Zhang, Q. L.; Li, J. C.; Liu, J. F., Oxidation-resistant, solution-processed plasmonic Ni nanochain-SiOx (x < 2) selective solar thermal absorbers. J. Appl. Phys. 2014, 116 (7), 8. [pdf]
  • Wang, Z. Y.; Wang, X. X.; Liu, J. F., Design of nanophotonic, hot-electron solar-blind ultraviolet detectors with a metal-oxide-semiconductor structure. J. Opt. 2014, 16 (12), 6. [pdf]
  • Liu, J. F.; Ieee, Ge-on-Si Integrated Photonics. In 2014 Conference on Lasers and Electro-Optics, Ieee: New York, 2014. [pdf]
  • Li, H. F.; Brouillet, J.; Wang, X. X.; Liu, J. F., Pseudo single crystal, direct-band-gap Ge0.89Sn0.11 on amorphous dielectric layers towards monolithic 3D photonic integration. Appl. Phys. Lett. 2014, 105 (20), 4. [pdf]
  • Li, H. F.; Brouillet, J.; Salas, A.; Chaffin, I.; Wang, X. X.; Liu, J. F., Low Temperature Geometrically Confined Growth of Pseudo Single Crystalline GeSn on Amorphous Layers for Advanced Optoelectronics. In Sige, Ge, and Related Compounds 6: Materials, Processing, and Devices, Harame, D.; Caymax, M.; Heyns, M.; Masini, G.; Miyazaki, S.; Niu, G.; Reznicek, A.; Saraswat, K.; Tillack, B.; Vincent, B.; Yeo, Y. C.; Ogura, A.; Murota, J., Eds. Electrochemical Soc Inc: Pennington, 2014; Vol. 64, pp 819-827. [pdf]

——–2013——–

  • Wang, X. X.; Li, H. F.; Camacho-Aguilera, R.; Cai, Y.; Kimerling, L. C.; Michel, J.; Liu, J. F., Infrared absorption of n-type tensile-strained Ge-on-Si. Opt. Lett. 2013, 38 (5), 652-654. [pdf]
  • Wang, X. X.; Kimerling, L. C.; Michel, J.; Liu, J. F., Large inherent optical gain from the direct gap transition of Ge thin films. Appl. Phys. Lett. 2013, 102 (13), 4. [pdf]
  • Michel, J.; Koester, S. J.; Liu, J. F.; Wang, X. X.; Geis, M. W.; Spector, S. J.; Grein, M. E.; Yoon, J. U.; Lyszczarz, T. M.; Feng, N. N., Photodetectors. Crc Press-Taylor & Francis Group: Boca Raton, 2013; p 479-551. [pdf]
  • Lin, H. T.; Ogbuu, O.; Liu, J. F.; Zhang, L.; Michel, J.; Hu, J. J., Breaking the Energy-Bandwidth Limit of Electrooptic Modulators: Theory and a Device Proposal. J. Lightwave Technol. 2013, 31 (24), 4029-4036. [pdf]
  • Li, H. F.; Brouillet, J.; Salas, A.; Wang, X. X.; Liu, J. F., Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics. Opt. Mater. Express 2013, 3 (9), 1385-1396. [pdf]
  • Hu, J. J.; Lin, H. T.; Ogbuu, O.; Liu, J. F.; Zhang, L.; Michel, J.; Ieee, Breaking the energy-bandwidth limit of electro-optic modulators: theory and a device proposal. In 2013 Ieee Optical Interconnects Conference, Ieee: New York, 2013; pp 23-+. [pdf]
  • Hu, J. J.; Lin, H. T.; Ogbuu, O.; Liu, J. F.; Zhang, L.; Michel, J.; Ieee, Breaking the energy-bandwidth limit of electro-optic modulators: theory and a device proposal. In 2013 Conference on Lasers and Electro-Optics, Ieee: New York, 2013. [pdf]
  • Cai, Y.; Han, Z. H.; Wang, X. X.; Camacho-Aguilera, R. E.; Kimerling, L. C.; Michel, J.; Liu, J. F., Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures. IEEE J. Sel. Top. Quantum Electron. 2013, 19 (4), 9. [pdf]
  • Anopchenko, A.; Prokofiev, A.; Yassievich, I. N.; Ossicini, S.; Tsybeskov, L.; Lockwood, D. J.; Saeed, S.; Gregorkiewicz, T.; Wojdak, M.; Liu, J. F.; Meldrum, A., Silicon-Based Light Sources. Crc Press-Taylor & Francis Group: Boca Raton, 2013; p 333-437. [pdf]

——–2012——–

  • Wang, X. X.; Li, H. F.; Yu, X. B.; Shi, X. L.; Liu, J. F., High-performance solution-processed plasmonic Ni nanochain-Al2O3 selective solar thermal absorbers. Appl. Phys. Lett. 2012, 101 (20), 5. [pdf]
  • McComber, K. A.; Duan, X. M.; Liu, J. F.; Michel, J.; Kimerling, L. C., Single-Crystal Germanium Growth on Amorphous Silicon. Adv. Funct. Mater. 2012, 22 (5), 1049-1057. [pdf]
  • Liu, J. F.; Kimerling, L. C.; Michel, J., Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration. Semicond. Sci. Technol. 2012, 27 (9), 13. [pdf]
  • Liu, J. F.; Camacho-Aguilera, R.; Bessette, J. T.; Sun, X. C.; Wang, X. X.; Cai, Y.; Kimerling, L. C.; Michel, J., Ge-on-Si optoelectronics. Thin Solid Films 2012, 520 (8), 3354-3360. [pdf]

——–2011——–

  • Wang, X. X.; Liu, J. F., Step-Coupler for Efficient Waveguide Coupling to Ge/Si Avalanche Photodetectors. IEEE Photonics Technol. Lett. 2011, 23 (3), 146-148. [pdf]
  • Sheng, X.; Liu, J. F.; Kozinsky, I.; Agarwal, A. M.; Michel, J.; Kimerling, L. C., Design and Non-Lithographic Fabrication of Light Trapping Structures for Thin Film Silicon Solar Cells. Adv. Mater. 2011, 23 (7), 843-+. [pdf]
  • Michel, J.; Liu, J. F.; Kimerling, L. C.; Camacho-Aguilera, R.; Bessette, J. T.; Cai, Y.; Ieee, A Germanium-on-Silicon Laser for On-chip Applications. In 2011 Conference on Lasers and Electro-Optics, Ieee: New York, 2011. [pdf]

——–2010——–

  • Wang, X. X.; Liu, J. F.; Ieee, Step Waveguide Design for Efficient Coupling to Integrated Ge/Si Avalanche Photodetectors. In 2010 7th Ieee International Conference on Group Iv Photonics, Ieee: New York, 2010; pp 99-101. [pdf]
  • Vasile, S.; Cheng, J.; Lipson, J.; Liu, J. F.; Michel, J., Single-photon imaging camera development for night vision. In Infrared Technology and Applications Xxxvi, Pts 1 and 2, Andresen, B. F.; Fulop, G. F.; Norton, P. R., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2010; Vol. 7660. [pdf]
  • Underwood, D.; Salvachua-Ferrando, B.; Stanek, R.; Lopez, D.; Liu, J.; Michel, J.; Kimerling, L. C., New optical technology for low mass intelligent trigger and readout. J. Instrum. 2010, 5, 7. [pdf]
  • Sun, X. C.; Liu, J. F.; Kimerling, L. C.; Michel, J., Toward a Germanium Laser for Integrated Silicon Photonics. IEEE J. Sel. Top. Quantum Electron. 2010, 16 (1), 124-131. [pdf]
  • Sheng, X.; Liu, J. F.; Kozinsky, I.; Agarwal, A. M.; Michel, J.; Kimerling, L. C.; Ieee, Efficient Light Trapping Structure in Thin Film Silicon Solar Cells. In 35th Ieee Photovoltaic Specialists Conference, Ieee: New York, 2010. [pdf]
  • Sheng, X.; Liu, J. F.; Coronel, N.; Agarwal, A. M.; Michel, J.; Kimerling, L. C., Integration of Self-Assembled Porous Alumina and Distributed Bragg Reflector for Light Trapping in Si Photovoltaic Devices. IEEE Photonics Technol. Lett. 2010, 22 (18), 1394-1396. [pdf]
  • Michel, J.; Liu, J. F.; Kimerling, L. C., High-performance Ge-on-Si photodetectors. Nat. Photonics 2010, 4 (8), 527-534. [pdf]
  • McComber, K. A.; Liu, J. F.; Michel, J.; Kimerling, L. C.; Ieee, Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic device integration. In 2010 7th Ieee International Conference on Group Iv Photonics, Ieee: New York, 2010; pp 57-59. [pdf]
  • Liu, J. F.; Sun, X. C.; Camacho-Aguilera, R.; Kimerling, L. C.; Michel, J., Band-Engineered Ge-on-Si Lasers for Integrated Photonics. In Sige, Ge, and Related Compounds 4: Materials, Processing, and Devices, Harame, D.; Ostling, M.; Masini, G.; Krishnamohan, T.; Bedell, S.; Reznicek, A.; Boquet, J.; Yeo, Y. C.; Caymax, M.; Tillack, B.; Miyazaki, S.; Koester, S., Eds. Electrochemical Soc Inc: Pennington, 2010; Vol. 33, pp 539-543. [pdf]
  • Liu, J. F.; Sun, X. C.; Camacho-Aguilera, R.; Kimerling, L. C.; Michel, J., Ge-on-Si laser operating at room temperature. Opt. Lett. 2010, 35 (5), 679-681. [pdf]
  • Liu, J. F.; Sun, X. C.; Camacho-Aguilera, R.; Cai, Y.; Michel, J.; Kimerling, L. C.; Ieee, Band-Engineered Ge-on-Si Lasers. In 2010 International Electron Devices Meeting – Technical Digest, Ieee: New York, 2010. [pdf]
  • Liu, J. F.; Sun, X. C.; Camacho-Aguilera, R.; Cai, Y.; Kimerling, L. C.; Michel, J.; Ieee, Monolithic Ge-on-Si Lasers for Integrated Photonics. In 2010 7th Ieee International Conference on Group Iv Photonics, Ieee: New York, 2010; pp 1-3. [pdf]
  • Liu, J. F.; Sun, X. C.; Camacho-Aguilera, R.; Cai, Y.; Kimerling, L. C.; Michel, J.; Ieee, Optical Gain and Lasing from Band-Engineered Ge-on-Si at Room Temperature. Ieice-Inst Electronics Information & Communication Engineers: Tokyo, 2010; p 520-521. [pdf]
  • Liu, J. F.; Michel, J.; Kimerling, L. C.; Ieee, Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor. Ieee: New York, 2010; p 325-+. [pdf]
  • Kurian, G.; Miller, J. E.; Psota, J.; Eastep, J.; Liu, J. F.; Michel, J.; Kimerling, L. C.; Agarwal, A.; Acm, ATAC: A 1000-Core Cache-Coherent Processor with On-Chip Optical Network. Assoc Computing Machinery: New York, 2010; p 477-488. [pdf]

——–before 2010——–

  • Zeng, L. R.; Bermel, P.; Yi, Y. S.; Alamariu, B. A.; Broderick, K. A.; Liu, J. F.; Hong, C. Y.; Duan, X. M.; Joannopoulos, J.; Kimerling, L. C., Realization of Significant Absorption Enhancement in Thin Film Silicon Solar Cells with Textured Photonic Crystal Backside Reflector. In Photovoltaic Materials and Manufacturing Issues, Sopori, B.; Yang, J.; Surek, T.; Dimmler, B., Eds. Materials Research Soc: Warrendale, 2009; Vol. 1123, pp 53-+.
  • Sun, X. C.; Liu, J. F.; Kimerling, L. C.; Michel, J.; Ieee, A Ge-on-Si Laser for Electronic-Photonic Integration. Ieee: New York, 2009; p 1623-1624.
  • Sun, X. C.; Liu, J. F.; Kimerling, L. C.; Michel, J., Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. Opt. Lett. 2009, 34 (8), 1198-1200.
  • Sun, X. C.; Liu, J. F.; Kimerling, L. C.; Michel, J., Direct gap photoluminescence of n-type tensile-strained Ge-on-Si. Appl. Phys. Lett. 2009, 95 (1), 3.
  • Sheng, X.; Liu, J. F.; Michel, J.; Agarwal, A. M.; Kimerling, L. C.; Ieee, LOW-COST, DETERMINISTIC QUASI-PERIODIC PHOTONIC STRUCTURES FOR LIGHT TRAPPING IN THIN FILM SILICON SOLAR CELLS. In 2009 34th Ieee Photovoltaic Specialists Conference, Vols 1-3, Ieee: New York, 2009; pp 2429-+.
  • Liu, J. F.; Sun, X. C.; Kimerling, L. C.; Michel, J., Direct-gap optical gain of Ge on Si at room temperature. Opt. Lett. 2009, 34 (11), 1738-1740.
  • Liu, J. F.; Sun, X. C.; Bai, Y.; Lee, K. E.; Fitzgerald, E. A.; Kimerling, L. C.; Michel, J., Efficient above-band-gap light emission in germanium. Chin. Opt. Lett. 2009, 7 (4), 271-273.
  • Liu, J. F.; Beals, M.; Michel, J.; Kimerling, L. C., Light up the Future of Silicon Microprocessors. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based Cmos 5: New Materials, Processes, and Equipment, Narayanan, V.; Roozeboom, F.; Kwong, D. L.; Iwai, H.; Gusev, E. P.; Timans, P. J., Eds. Electrochemical Soc Inc: Pennington, 2009; Vol. 19, pp 17-+.
  • Zeng, L.; Bermel, P.; Yi, Y.; Alamariu, B. A.; Broderick, K. A.; Liu, J.; Hong, C.; Duan, X.; Joannopoulos, J.; Kimerling, L. C., Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector. Appl. Phys. Lett. 2008, 93 (22), 3.
  • Tu, K. Y.; Rasras, M. S.; Chen, Y. K.; Patel, S. S.; Gill, D. M.; White, A. E.; Carothers, D.; Pomerene, A.; Beattie, J.; Beals, M.; Michel, J.; Liu, J.; Kimerling, L. C.; Ieee, CMOS photonic microwave filters for UWB applications. In 2008 Ieee Radio and Wireless Symposium, Vols 1 and 2, Ieee: New York, 2008; pp 551-+.
  • Sun, X. C.; Liu, J. F.; Kimerling, L. C.; Michel, J., Optical Bleaching of Thin Film Ge on Si. In Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, Harame, D.; Caymax, M.; Koester, S.; Miyazaki, S.; Rim, K.; Tillack, B.; Boquet, J.; Cressier, J.; Masini, G.; Reznicek, A.; Takagi, S., Eds. Electrochemical Soc Inc: Pennington, 2008; Vol. 16, pp 881-889.
  • Liu, J. F.; Sun, X. C.; Becla, P.; Kimerling, L. C.; Michel, J.; Ieee, Towards a Ge-based Laser for CMOS Applications. Ieee: New York, 2008; p 16-18.
  • Liu, J. F.; Michel, J., High Performance Ge Devices for Electronic-Photonic Integrated Circuits. In Sige, Ge, and Related Compounds 3: Materials, Processing, and Devices, Harame, D.; Caymax, M.; Koester, S.; Miyazaki, S.; Rim, K.; Tillack, B.; Boquet, J.; Cressier, J.; Masini, G.; Reznicek, A.; Takagi, S., Eds. Electrochemical Society Inc: Pennington, 2008; Vol. 16, pp 575-582.
  • Liu, J. F.; Beals, M.; Pomerene, A.; Bemardis, S.; Sun, R.; Cheng, J.; Kimerling, L. C.; Michel, J.; Ieee, Ultralow Energy, Integrated GeSi Electroabsorption Modulators on SOI. Ieee: New York, 2008; p 10-12.
  • Liu, J. F., Multiwavelength studies of ultraluminous supersoft sources. In Population Explosion: The Nature and Evolution of X-Ray Binaries in Diverse Environments, Bandyopadhyay, R. M.; Wachter, S.; Gelino, D.; Gelino, C. R., Eds. Amer Inst Physics: Melville, 2008; Vol. 1010, pp 345-347.
  • Liu, J.; Beals, M.; Pomerene, A.; Bernardis, S.; Sun, R.; Cheng, J.; Kimerling, L. C.; Michel, J., Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators. Nat. Photonics 2008, 2 (7), 433-437.
  • Gill, D. M.; Rasras, M.; Tu, K. Y.; Chen, Y. K.; White, A. E.; Patel, S. S.; Carothers, D.; Pomerene, A.; Kamocsai, R.; Beattie, J.; Kopa, A.; Apsel, A.; Beals, M.; Mitchel, J.; Liu, J. F.; Kimerling, L. C., Optical modulation techniques for analog signal processing and CMOS compatible electrooptic modulation. In Silicon Photonics Iii, Kubby, J. A.; Reed, G. T., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2008; Vol. 6898.
  • Beals, M.; Michel, J.; Liu, J. F.; Ahn, D. H.; Sparacin, D.; Sun, R.; Hong, C. Y.; Kimerling, L. C.; Pomerene, A.; Carothers, D.; Beattie, J.; Kopa, A.; Apsel, A.; Rasras, M. S.; Gill, D. M.; Patel, S. S.; Tu, K.; Chen, Y. K.; White, A. E., Process flow innovations for photonic device integration in CMOS. In Silicon Photonics Iii, Kubby, J. A.; Reed, G. T., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2008; Vol. 6898.
  • Michel, J.; Liu, J. F.; Ahn, D. H.; Sparacin, D.; Sun, R.; Hong, C. Y.; Giziewicz, W. P.; Beals, M.; Kimerling, L. C.; Kopa, A.; Apsel, A. B.; Rasras, M. S.; Gill, D. M.; Patel, S. S.; Tu, K. Y.; Chen, Y. K.; White, A. E.; Pomerene, A.; Carothers, D.; Grove, M. J., Advances in fully CMOS integrated photonic devices. In Silicon Photonics Ii, Kubby, J. A.; Reed, G. T., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2007; Vol. 6477.
  • Liu, J. F.; Pan, D.; Jongthammanurak, S.; Wada, K.; Kimerling, L. C.; Michel, J., Design of monolithically integrated GeSi electro-absorption modulators and photodetectors on an SOI platform. Opt. Express 2007, 15 (2), 623-628.
  • Liu, J.; Sun, X.; Pan, D.; Wang, X.; Kimerling, L. C.; Koch, T. L.; Michel, J., Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express 2007, 15 (18), 11272-11277.
  • Liu, J.; Alm, D.; Jongthammanurak, S.; Pan, D.; Hong, C. Y.; Beals, M.; Kimerling, L. C.; Michel, J.; Ieee, Ge-based active devices for Si photonics. Ieee: New York, 2007; p 274-276.
  • Feng, N. N.; Michel, J.; Zeng, L.; Liu, J.; Hong, C. Y.; Kimerling, L. C.; Duan, X., Design of highly efficient light-trapping structures for thin-film crystalline silicon solar cells. IEEE Trans. Electron Devices 2007, 54 (8), 1926-1933.
  • Cannon, D. D.; Liu, J. F.; Danielson, D. T.; Jongthammanurak, S.; Enuha, U. U.; Wada, K.; Michel, J.; Kimerling, L. C., Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates. Appl. Phys. Lett. 2007, 91 (25), 3.
  • Ahn, D.; Hong, C. Y.; Liu, J. F.; Giziewicz, W.; Beals, M.; Kimerling, L. C.; Michel, J.; Chen, J.; Kartner, F. X., High performance, waveguide integrated Ge photodetectors. Opt. Express 2007, 15 (7), 3916-3921.
  • Zeng, L. R.; Yi, Y. S.; Hong, C. Y.; Alamariu, B. A.; Liu, J. F.; Duan, X. M.; Kimerling, L. C., New solar cells with novel light trapping via textured photonic crystal back reflector. In Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications, Olafsen, L. J.; Biefeld, R. M.; Wanke, M. C.; Saxler, A. W., Eds. Materials Research Soc: Warrendale, 2006; Vol. 891, pp 251-+.
  • Zeng, L.; Yi, Y.; Hong, C.; Liu, J.; Feng, N.; Duan, X.; Kimerling, L. C.; Alamariu, B. A., Efficiency enhancement in Si solar cells by textured photonic crystal back reflector. Appl. Phys. Lett. 2006, 89 (11), 3.
  • Wang, X. X.; Liu, J. F.; Cheng, B. W.; Yu, J. Z.; Wang, Q. M., Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate. Nanotechnology 2006, 17 (15), 3989-3993.
  • Wada, K.; Liu, J. F.; Jongthammanurak, S.; Cannon, D. D.; Danielson, D. T.; Ahn, D. H.; Akiyama, S.; Popovic, M.; Lim, D. R.; Lee, K. K.; Luan, H. C.; Ishikawa, Y.; Duan, X.; Haus, H. A.; Kimerling, L. C., Si microphotonics for optical interconnection. In Optical Interconnects: The Silicon Approach, Pavesi, L.; Guillot, G., Eds. Springer-Verlag Berlin: Berlin, 2006; pp 291-+.
  • Liu, J. F.; Pan, D.; Jongthammanurak, S.; Ahn, D.; Hong, C. Y.; Beals, M.; Kimerling, L. C.; Michel, J.; Pomerene, A. T.; Hill, C.; Jaso, M.; Tu, K. Y.; Chen, Y. K.; Patel, S.; Rasras, M.; White, A.; Gill, D. M.; Ieee, Waveguide-integrated Ge p-i-n photodetectors on SOI platform. Ieee: New York, 2006; p 173-+.
  • Liu, J. F.; Ahn, D.; Hong, C. Y.; Pan, D.; Jongthammanurak, S.; Beals, M.; Kimerling, L. C.; Michel, J.; Pomerene, A. T.; Hill, C.; Jaso, M.; Tu, K. Y.; Chen, Y. K.; Patel, S.; Rasras, M.; White, A.; Gill, D. M.; Ieee, Waveguide integrated Ge p-i-n photodetectors on a silicon-on-insulator platform. Ieee: New York, 2006; p 1-4.
  • Kimerling, L. C.; Ahn, D.; Apsel, A. B.; Beals, M.; Carothers, D.; Chen, Y. K.; Conway, T.; Gill, D. M.; Grove, M.; Hong, C. Y.; Lipson, M.; Liu, J.; Michel, J.; Pan, D.; Patel, S. S.; Pomerene, A. T.; Rasras, M.; Sparacin, D. K.; Tu, K. Y.; White, A. E.; Wong, C. W., Electronic-photonic integrated circuits on the CMOS platform. In Silicon Photonics, Kubby, J. A.; Reed, G. T., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2006; Vol. 6125.
  • Kartner, F. X.; Byun, H.; Grawert, F. J.; Gopinath, J. T.; Shen, H. M.; Ippen, E. P.; Akiyama, S.; Liu, J.; Wada, K.; Kimerling, L. C.; Ieee, Si/Ge semiconductor saturable Bragg reflectors for integrated mode-locked lasers. In 2006 Ieee Leos Annual Meeting Conference Proceedings, Vols 1 and 2, Ieee: New York, 2006; pp 244-+.
  • Kartner, F. X.; Akiyama, S.; Barbastathis, G.; Barwicz, T.; Byun, H.; Danielson, D. T.; Gan, F.; Grawert, F.; Holzwarth, C. W.; Hoyt, J. L.; Ippen, E. P.; Kim, M.; Kimerling, L. C.; Liu, J.; Michel, J.; Olubuyide, O. O.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Rackich, P. T.; Ram, R. J.; Smith, H. I.; Watts, M. R., Electronic photonic integrated circuits for high speed, high resolution, analog to digital conversion. In Silicon Photonics, Kubby, J. A.; Reed, G. T., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2006; Vol. 6125.
  • Jongthammanurak, S.; Liu, J. F.; Wada, K.; Cannon, D. D.; Danielson, D. T.; Pan, D.; Kimerling, L. C.; Michel, J., Large electro-optic effect in tensile strained Ge-on-Si films. Appl. Phys. Lett. 2006, 89 (16), 3.
  • Jongthammanurak, S.; Liu, J. F.; Wada, K.; Cannon, D.; Danielson, D. T.; Pan, D.; Michel, J.; Kimerling, L. C.; Ieee, Large electro-optic effect in tensile strained Ge-on-Si films. Ieee: New York, 2006; p 34-+.
  • Michel, J.; Liu, J. F.; Giziewicz, W.; Pan, D.; Wada, K.; Cannon, D. D.; Jongthammanurak, S.; Danielson, D. T.; Kimerling, L. C.; Chen, J.; Ilday, F. O.; Kartner, F. X.; Yasaitis, J.; Ieee, High performance Ge p-i-n photodetectors on Si. Ieee: New York, 2005; p 177-179.
  • Liu, J. F.; Michell, J.; Cannon, D. D.; Giziewicz, W.; Pan, D.; Danielson, D. T.; Jongthammanurak, S.; Yasitis, J.; Wada, K.; Fonstad, C. G.; Kimerling, L. C., High speed Ge photodetectors on Si platform for GHz optical communications in C+L bands. In Progress in Compound Semiconductor Materials Iv-Electronic and Optoelectronic Applications, Brown, G. J.; Biefeld, R. M.; Gmachl, C.; Manasreh, M. O.; Unterrainer, K., Eds. Materials Research Soc: Warrendale, 2005; Vol. 829, pp 285-289.
  • Liu, J. F.; Michel, J.; Giziewicz, W.; Pan, D.; Wada, K.; Cannon, D. D.; Jongthammanurak, S.; Danielson, D. T.; Kimerling, L. C.; Chen, J.; Ilday, F. O.; Kartner, F. X.; Yasaitis, J., High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform. Appl. Phys. Lett. 2005, 87 (10), 3.
  • Liu, J. F.; Cannon, D. D.; Wada, K.; Ishikawa, Y.; Jongthammanurak, S.; Danielson, D. T.; Michel, J.; Kimerling, L. C., Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Appl. Phys. Lett. 2005, 87 (1), 3.
  • Ishikawa, Y.; Wada, K.; Liu, J. F.; Cannon, D. D.; Luan, H. C.; Michel, J.; Kimerling, L. C., Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate. J. Appl. Phys. 2005, 98 (1), 9.
  • Grawert, F. J.; Gopinath, J. T.; Ilday, F. O.; Shen, H. M.; Ippen, E. P.; Kartner, F. X.; Akiyama, S.; Liu, J.; Wada, K.; Kimerling, L. C., 220-fs erbium-ytterbium : glass laser mode locked by a broadband low-loss silicon/germanium saturable absorber. Opt. Lett. 2005, 30 (3), 329-331.
  • Akiyama, S.; Grawert, F. J.; Liu, J.; Wada, K.; Celler, G. K.; Kimerling, L. C.; Kaertner, F. X., Fabrication of highly reflecting epitaxy-ready Si-SiO2 Bragg reflectors. IEEE Photonics Technol. Lett. 2005, 17 (7), 1456-1458.
  • Wada, K.; Liu, J. F.; Jongthammanurak, S.; Cannon, D. D.; Danielson, D. T.; Ishikawa, Y.; Eshed, A.; Hong, C. Y.; Michel, J.; Kimerling, L. C.; ieee, Direct integration of ge detectors and modulators on the Si microphotonics platform. Ieee: New York, 2004; p 40-42.
  • Liu, J. F.; Michel, J.; Giziewicz, W.; Cannon, D. D.; Jongthammanurak, S.; Danielson, D. T.; Pan, D.; Yasaitis, J.; Wada, K.; Kimerling, L. C.; ieee, A 20GHz, tensile strained Ge photodetector on Si platform with broad detection spectrum for optical communications and on-chip applications. In 2004 Ieee Leos Annual Meeting Conference Proceedings, Vols 1 and 2, Ieee: New York, 2004; pp 150-151.
  • Liu, J. F.; Cannon, D. D.; Wada, K.; Ishikawa, Y.; Jongthammanurak, S.; Danielson, D. T.; Michel, J.; Kimerling, L. C., Silicidation-induced band gap shrinkage in Ge epitaxial films on Si. Appl. Phys. Lett. 2004, 84 (5), 660-662.
  • Liu, J. F.; Cannon, D. D.; Wada, K.; Ishikawa, Y.; Danielson, D. T.; Jongthammanurak, S.; Michel, J.; Kimerling, L. C., Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100). Phys. Rev. B 2004, 70 (15), 5.
  • Kimerling, L. C.; Dal Negro, L.; Saini, S.; Yi, Y.; Ahn, D.; Akiyama, S.; Cannon, D.; Liu, J.; Sandland, J. G.; Sparacin, D.; Michel, J.; Wada, K.; Watts, M. R., Monolithic Silicon Microphotonics. In Silicon Photonics, Pavesi, L.; Lockwood, D. J., Eds. Springer-Verlag Berlin: Berlin, 2004; Vol. 94, pp 89-119.
  • Grawert, F. J.; Akiyama, S.; Gopinath, J. T.; Ilday, F. O.; Liu, J.; Shen, H.; Wada, K.; Kimerling, L. C.; Ippen, E. P.; Kaertner, F. X.; ieee, Silicon-germanium saturable absorber mirrors. In 2004 Ieee Leos Annual Meeting Conference Proceedings, Vols 1 and 2, Ieee: New York, 2004; pp 735-736.
  • Dosunmu, O. I.; Cannon, D. D.; Emsley, M. K.; Ghyselen, B.; Liu, J. F.; Kimerling, L. C.; Unlu, M. S., Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates. IEEE J. Sel. Top. Quantum Electron. 2004, 10 (4), 694-701.
  • Dosunmu, O. I.; Cannon, D. D.; Emsley, M. K.; Ghyselen, B.; Liu, J.; Kimerling, L. C., Germanium on double-SOI photodetectors for 1550 nm operation. In Semiconductor Photodetectors, Elinden, K. J.; Dereniak, E. L., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2004; Vol. 5353, pp 65-71.
  • Cannon, D. D.; Liu, J. F.; Ishikawa, Y.; Wada, K.; Danielson, D. T.; Jongthammanurak, S.; Michel, J.; Kimerling, L. C., Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications. Appl. Phys. Lett. 2004, 84 (6), 906-908.
  • Ishikawa, Y.; Wada, K.; Cannon, D. D.; Liu, J. F.; Luan, H. C.; Kimerling, L. C., Strain-induced band gap shrinkage in Ge grown on Si substrate. Appl. Phys. Lett. 2003, 82 (13), 2044-2046.
  • Cannon, D. D.; Luan, H. C.; Danielson, D. T.; Jongthammanurak, S.; Liu, J.; Michel, J.; Wada, K.; Kimerling, L. C., Monolithic Si-based technology for optical receiver circuits. In Quantum Sensing: Evolution and Revolution from Past to Future, Razeghi, M.; Brown, G. J., Eds. Spie-Int Soc Optical Engineering: Bellingham, 2003; Vol. 4999, pp 145-155.
  • Cannon, D. D.; Jongthammanurak, S.; Liu, J. F.; Danielson, D. T.; Wada, K.; Michel, J.; Kimerling, L. C., Near-infrared Ge photodetectors fabricated on Si substrates with CMOS technology. In Optoelectronics of Group-Iv-Based Materials, Gregorkiewicz, T.; Elliman, R. G.; Fauchet, P. M.; Hutchby, J. A., Eds. Materials Research Soc: Warrendale, 2003; Vol. 770, pp 183-187.
  • Liu, J. F.; Feng, J. Y.; Zhu, J., Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system. Appl. Phys. Lett. 2002, 80 (2), 270-272.
  • Liu, J. F.; Feng, J. Y.; Li, W. Z., Reduction of the tensile stress in CoSi2 films by pre-deposition carbon ion implantation. Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater. Atoms 2002, 194 (3), 289-296.
  • Liu, Z. Q.; Liu, J. F.; Feng, J. Y.; Li, W. Z., Low-temperature, direct synthesis of beta-SiC by metal vapor vacuum arc ion source implantation. Mater. Lett. 2001, 50 (5-6), 275-278.
  • Liu, Z. Q.; Liu, J. F.; Feng, J. Y.; Li, W. Z., Low temperature synthesis of beta-SiC by a metal vapor vacuum arc ion source. Diamond Relat. Mater. 2001, 10 (12), 2195-2198.
  • Liu, J. F.; Feng, J. Y.; Zhu, J., Comparison of the thermal stability of NiSi films in Ni/Pt/(111)Si and Ni/Pt/(100)Si systems. J. Appl. Phys. 2001, 90 (2), 745-749.
  • Liu, J. F.; Feng, J. Y.; Li, W. Z., Effect of pre-Co-deposition C+ implantation on the stress level of CoSi2 films formed on Si(100) substrates. Semicond. Sci. Technol. 2001, 16 (4), 273-275.
  • Liu, J. F.; Feng, J. Y.; Li, B.; Zhu, J., Solid phase reaction between crystalline, (002) oriented Co film and Si(111) substrate: Preferential orientations of silicides. J. Mater. Sci. Lett. 2001, 20 (9), 803-805.
  • Liu, J. F.; Feng, J. Y.; Zhu, J., Growth of epitaxial CoSi2 films on Si(100) substrates through direct solid phase reaction between crystalline Co films and Si substrates. J. Cryst. Growth 2000, 218 (2-4), 272-276.
  • Liu, J. F.; Feng, J. Y.; Li, B.; Zhu, J., Study on the solid state reaction between crystalline Co film and Si(111) substrate. J. Cryst. Growth 2000, 209 (4), 795-800.
  • Liu, J. F.; Chen, H. B.; Feng, J. Y.; Zhu, J., Improvement of the thermal stability of NiSi films by using a thin Pt interlayer. Appl. Phys. Lett. 2000, 77 (14), 2177-2179.
  • Liu, J. F.; Chen, H. B.; Feng, J. Y., Enhanced thermal stability of NiSi films on Si(111) substrates by a thin Pt interlayer. J. Cryst. Growth 2000, 220 (4), 488-493.